1 cree ? ez950-p? leds data sheet (anode-up) c xxx ez950-s xxx 00- x crees ezbright ? leds are the newest generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device submount technology to deliver superior value for high- intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die-attachable with conductive adhesive, solder paste or solder preforms, as well as fux eutectic attach. these vertically structured, low forward voltage led chips are approximately 170 microns in height and are tested for conformity to optical and electrical specifcations. crees ez? chips are useful in a wide range of applications including general illumination, automotive lighting and mobile fash. d a t a s h e e t : c p r 3 f w r e v c c xxx ez950-s xxx 00- x chip diagram features ? lambertian radiation pattern ? anode-up design (p-pad up) ? ezbright led technology, binned @ 350 ma C 450 nm C 440+ mw C 460 nm C 420+ mw C 470 nm C 400+ mw C 527 nm C 170+ mw ? low forward voltage (vf) C 3.1 v typical at 350 ma ? maximum dc forward current C 1000 ma ? backside metal versions for various attach methods: -a (ausn) for use with conductive adhesives, flux eutectic attach, solder paste & solder preforms -g (ltda) for low temperature flux eutectic attach appli cations ? ge neral illumination C aircraft C decorative lighting C task lighting C outdoor illumination ? white leds ? projection displays ? automotive exterior ? mobile flash anode (+), 2 places backside ohmic metallization cathode ( - ) bottom view top view 930 x 930 m mesa (junction), 900 x 900 m bond pads (2), 130 x 130 m side view thickness 170 m subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c note 1, 2 & 3 c xxx ez950-s xxx 00- x dc forward current 1000 ma peak forward current (1/10 duty cycle @ 1 khz) 1500 ma led junction temperature 150c reverse voltage 5 v operating temperature range -40c to +100c led chip storage temperature range -40c to +120c recommended die sheet storage conditions 30c / 85% rh typical electrical/optical characteristics at t a = 25c, if = 350 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( o d , nm) min. typ. max. max. typ. c450ez950-s xx x00- x 2.7 3.1 3.4 2 20 c460ez950-s xx x00- x 2.7 3.1 3.4 2 21 c470ez950-s xx x00- x 2.7 3.1 3.4 2 22 c527ez950-s xx x00- x 2.8 3.25 3.8 2 35 mechanical specifcations c xxx ez950-s xxx 00- x description dimensions tolerance p-n junction area (m) 900 x 900 35 chip area (m) 930 x 930 35 chip thickness (m) 170 25 top au bond pad (m) - qty. 2 130 x 130 25 au bond pad thickness (m) 1.0 0.5 backside ohmic metal area (m) 930 x 930 35 backside ohmic metal thickness (m) C -a (ausn) 3.0 1.5 backside ohmic metal thickness (m) C -g (ltda) 3.3 1.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a silicone encapsulated chip on mcpcb for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see the cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to header without an encapsulant. optical characteristics were measured in an integrating sphere using illuminance e. 3. the maximum forward current is determined by the thermal resistance between the led junction and ambient. it is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the led junction to ambient in order to optimize product performance. 0 200 400 600 800 1000 1200 25 50 75 100 125 150 maximum opeatin cuent (ma) amient tempeatue ( c) th - a 10 c th - a 15 c th - a 20 c th - a 25 c ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez950-p? are trademarks of cree, inc. cpr3fw rev c (201501) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
3 standard bins for c xxx ez950-s xxx 00- x led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez950-s xxx00-x ) orders may be flled with any or all bins (c xxx ez950-0 xxx-x ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated headers without an encapsulant. c450ez950-s44000-x c450ez950-0333-x c450ez950-0334-x c450ez950-0335-x c450ez950-0336-x c450ez950-0329-x c450ez950-0330-x c450ez950-0331-x c450ez950-0332-x c450ez950-0325-x c450ez950-0326-x c450ez950-0327-x c450ez950-0328-x c450ez950-0321-x c450ez950-0322-x c450ez950-0323-x c450ez950-0324-x c450ez950-0317-x c450ez950-0318-x c450ez950-0319-x c450ez950-0320-x c450ez950-0313-x c450ez950-0314-x c450ez950-0315-x c450ez950-0316-x c450ez950-0309-x c450ez950-0310-x c450ez950-0311-x c450ez950-0312-x 560 540 520 500 480 460 440 dominant wavelength (nm) radiant flux (mw) 447.5 450 452.5 445 455 c460ez950-s42000-x c460ez950-0329-x c460ez950-0330-x c460ez950-0331-x c460ez950-0332-x c460ez950-0325-x c460ez950-0326-x c460ez950-0327-x c460ez950-0328-x c460ez950-0321-x c460ez950-0322-x c460ez950-0323-x c460ez950-0324-x c460ez950-0317-x c460ez950-0318-x c460ez950-0319-x c460ez950-0320-x c460ez950-0313-x c460ez950-0314-x c460ez950-0315-x c460ez950-0316-x c460ez950-0309-x c460ez950-0310-x c460ez950-0311-x c460ez950-0312-x c460ez950-0305-x c460ez950-0306-x c460ez950-0307-x c460ez950-0308-x 540 520 500 480 460 440 420 457.5 460 462.5 455 465 dominant wavelength (nm) radiant flux (mw) ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez950-p? are trademarks of cree, inc. cpr3fw rev c (201501) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
4 standard bins for c xxx ez950-s xxx 00- x led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez950-s xxx00-x ) orders may be flled with any or all bins (c xxx ez950-0 xxx-x ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated headers without an encapsulant. c470ez950-s40000-x c470ez950-0321-x c470ez950-0322-x c470ez950-0323-x c470ez950-0324-x c470ez950-0317-x c470ez950-0318-x c470ez950-0319-x c470ez950-0320-x c470ez950-0313-x c470ez950-0314-x c470ez950-0315-x c470ez950-0316-x c470ez950-0309-x c470ez950-0310-x c470ez950-0311-x c470ez950-0312-x c470ez950-0305-x c470ez950-0306-x c470ez950-0307-x c470ez950-0308-x c470ez950-0301-x c470ez950-0302-x c470ez950-0303-x c470ez950-0304-x 500 480 460 440 420 400 dominant wavelength (nm) radiant flux (mw) 467.5 470 472.5 465 475 C527EZ950-S17000-X c527ez950-0316-x c527ez950-0317-x c527ez950-0318-x c527ez950-0313-x c527ez950-0314-x c527ez950-0315-x c527ez950-0310-x c527ez950-0311-x c527ez950-0312-x c527ez950-0307-x c527ez950-0308-x c527ez950-0309-x c527ez950-0304-x c527ez950-0305-x c527ez950-0306-x 250 230 210 190 170 dominant wavelength (nm) radiant flux (mw) 525 530 535 520 ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez950-p? are trademarks of cree, inc. cpr3fw rev c (201501) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
5 characteristic curves, t a = 25c this is a representative measurement for the ez950? led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 50% 100% 150% 200% 250% 300% 0 250 500 750 1000 1250 relative light intensity if (ma) relative intensity vs. forward current - 10 - 5 0 5 10 0 250 500 750 1000 1250 dominant wavelength shift (nm) if (ma) wavelength shift vs. forward current 0 250 500 750 1000 1250 2 2.5 3 3.5 4 if (ma) vf (v) forward current vs. forward voltage - 0.500 - 0.400 - 0.300 - 0.200 - 0.100 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez950-p? are trademarks of cree, inc. cpr3fw rev c (201501) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
6 radiation pattern this is a representative radiation pattern for the ez led products. actual patterns will vary slightly for each chip. ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree?, the cree logo, and ezbright? are registered trademarks, and ez? and ez950-p? are trademarks of cree, inc. cpr3fw rev c (201501) cree, inc. 4600 silicon drive durham, nc 27703-8475 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/chips
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